MJ11033G
ON(安森美)
TO-3
无铅环保型
直插式
散装
大功率
高频
PNP型
企业名:深圳市勤思达科技有限公司
类型:贸易/代理/分销
电话:
0755-83264115
0755-82710921
手机:15889758566
13714022780
联系人:朱亮成/18948336722
微信:
邮箱:1282971461@qq.com
地址:广东深圳深圳市福田区华强北赛格科技园四栋中12楼A4座—2L
类别:分离式半导体产品
家庭:晶体管(BJT) - 单路
系列:-MJ11032G NPN MJ11033G PNP 晶体管 MJ11032G NPN MJ11033G PNP 晶体管
晶体管类型:PNP - 达林顿
电流 - 集电极 (Ic)():50A
电压 - 集电极发射极击穿():120V
Ib、Ic条件下的Vce饱和度():3.5V @ 500mA,50A
电流 - 集电极截止():2mA
在某 Ic、Vce 时的直流电流增益 (hFE):1000 @ 25A,5V
功率 - :300W
频率 - 转换:-
安装类型:通孔
封装/外壳:TO-204AE
供应商设备封装:TO-3
包装:托盘
其它名称:MJ11033GOS
标准包装:100
备注:MJ11033G高电流互补硅功率晶体管的使用如在补充通用放大器的输出设备应用程序。
特点:
•高直流电流增益 −hFE= 1000 (值) @我C= 25 ADC
hFE= 400 (值) @我C= 50 ADC
•曲线100 A(脉冲)
•保护二极管额定我
•单片式结构,具有内置基射极分流电阻
•结温为+ 200_C
•无铅包可用
MJ11032G NPN MJ11033G PNP 晶体管
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200C
• Pb−Free Packages are Available*
There are two limitations on the power−handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200C; TC is
variable depending on conditions. At high case
MJ11032G NPN MJ11033G PNP 晶体管
企业名:深圳市勤思达科技有限公司
类型:贸易/代理/分销
电话:
0755-83264115
0755-82710921
手机:15889758566
13714022780
联系人:朱亮成/18948336722
微信:
邮箱:1282971461@qq.com
地址:广东深圳深圳市福田区华强北赛格科技园四栋中12楼A4座—2L