型号：MJ15004 MJ15004G MJ15004G MJ15004G MJ15004G
描述：Silicon NPN Power Transistors 制造商：ON Semiconductor
产品种类：Transistors Bipolar (BJT)
晶体管极性：NPN
集电极—发射极电压 VCEO：140 V
发射极 - 基极电压 VEBO：5 V
直流电集电极电流：20 A
直流集电极/Base Gain hfe Min：25
配置：Single
工作频率：2 MHz
工作温度：+ 150 C
安装风格：Through Hole
封装 / 箱体：TO-204-2 (TO-3)
封装：Tray
集电极连续电流：20 A
工作温度：- 65 C
功率耗散：250 W
工厂包装数量：100
描述：MJ15003和MJ15004是PowerBaset功率晶体管专为高功率音频，磁头定位器和其它线性应用程序。

The MJ15003 and MJ15004 are power transistors designed for high

power audio, disk head positioners and other linear applications.

Features

• High Safe Operating Area

• For Low Distortion Complementary Designs

• High DC Current Gain

• These Devices are Pb−Free and are RoHS Compliant*

                                           MJ15003 (NPN), MJ15004 (PNP)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Collector−Emitter Voltage VCEO 140 Vdc

Collector−Base Voltage VCBO 140 Vdc

Emitter−Base Voltage VEBO 5 Vdc

Collector Current − Continuous IC 20 Adc

Base Current − Continuous IB 5 Adc

Emitter Current − Continuous IE 25 Adc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD 250

1.43

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to +200 °C

企业名：深圳市勤思达科技有限公司

类型：贸易/代理/分销

电话： 0755-83264115
0755-82710921

手机：15889758566
13714022780

联系人：朱亮成/18948336722

QQ：

微信：

邮箱：1282971461@qq.com

地址：广东深圳深圳市福田区华强北赛格科技园四栋中12楼A4座—2L