秒动科技供应雪崩二极管（APD，Avalanche photodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 Series 11: Blue sensitivity enhanced (for biomedical applications) Order # Type Active Area Dark Current Rise Time Chip Package Size Area M=100 410nm 50Ω mm mm2 nA ns 500970 AD800-11 TO52S1 Ø0.8 0.5 1 1 500967 AD1900-11 TO5i Ø1.95 3 5 2 Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz) Order # Type Active Area Dark Current Rise Time Chip Package Size Area 660nm M=100 660nm 50Ω mm mm2 A/W GHz 501828 AD100-12 LCC6.1 Ø0.1 0.008 50 typ.3, min.2 501829 AD100-12 LCC6.1f Ø0.1 0.008 44 typ.3, min.2 501831 AD100-12 TO52S1 Ø0.1 0.008 50 typ.3, min.2 501157 AD230-12 LCC6.1 Ø0.23 0.042 50 typ.3, min.2 501156 AD230-12 LCC6.1f Ø0.23 0.042 44 typ.3, min.2 501820 AD230-12 LCC6.1f Ø0.23 0.042 44 typ.3, min.2 501162 AD230-12 TO52S1 Ø0.23 0.042 50 typ.3, min.2 501155 AD500-12 LCC6.1 Ø0.5 0.196 50 typ.3, min.2 501154 AD500-12 LCC6.1f Ø0.5 0.196 44 typ.3, min.2 501819 AD500-12 LCC6.1f Ø0.5 0.196 44 typ.3, min.2 501163 AD500-12 TO52S1 Ø0.5 0.196 50 typ.3, min.2 Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds) Order # Type Active Area Dark Current Rise Time Chip Package Size Area M=100 M=100 20V 50Ω mm mm2 nA ns 501810 AD100-8 LCC6.1 Ø0.1 0.008 0.05 <0.18 501811 AD100-8 LCC6.1f Ø0.1 0.008 0.05 <0.18 501812 AD100-8 LCC6.1f Ø0.1 0.008 0.05 <0.18 500011 AD100-8 TO52S1 Ø0.1 0.008 0.05 <0.18 501171 AD100-8 TO52S3 Ø0.1 0.008 0.05 <0.18 501078 AD230-8 LCC6.1 Ø0.23 0.04 0.3 0.18 501079 AD230-8 LCC6.1f Ø0.23 0.04 0.3 0.18 501805 AD230-8 LCC6.1f Ø0.23 0.04 0.3 0.18 500019 AD230-8 TO52S1 Ø0.23 0.04 0.3 0.18 500022 AD230-8 TO52S3 Ø0.23 0.04 0.3 0.18 501496 AD230-8 ODFN2x2 Ø0.23 0.04 0.3 0.18 501077 AD500-8 LCC6.1 Ø0.5 0.2 0.5 0.35 501076 AD500-8 LCC6.1f Ø0.5 0.2 0.5 0.35 501809 AD500-8 LCC6.1f Ø0.5 0.2 0.5 0.35 500030 AD500-8 TO52S1 Ø0.5 0.2 0.5 0.35 500305 AD500-8 TO52S2 Ø0.5 0.2 0.5 0.35 500155 AD500-8 TO52S3 Ø0.5 0.2 0.5 0.35 500947 AD800-8 TO52S1 Ø0.8 0.5 2 0.7 501117 AD1100-8 TO52S1 Ø1.13 1 4-6 1 500015 AD1900-8 TO5i Ø1.95 3 15 1.4 501194 AD3000-8 TO5i Ø3 7.07 30 2 500160 AD5000-8 TO8i Ø5 19.63 60 3 500002 AD230-8-2.3G TO5 AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package. 500003 AD500-8-1.3G TO5 AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package. Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders) Order # Type Active Area Dark Current Rise Time Chip Package Size Area M=100 M=100 mm mm2 nA ns 501815 AD100-9 LCC6.1 Ø0.1 0.008 0.1 <0.5 501816 AD100-9 LCC6.1f Ø0.1 0.008 0.1 <0.5 501123 AD230-9 LCC6.1 Ø0.23 0.04 0.5 0.5 501817 AD230-9 LCC6.1f Ø0.23 0.04 0.5 0.5 500020 AD230-9 TO52S1 Ø0.23 0.04 0.5 0.5 501265 AD230-9 TO52S1F2 Ø0.23 0.04 0.5 0.5 500023 AD230-9 TO52S3 Ø0.23 0.04 0.5 0.5 501122 AD500-9 LCC6.1 Ø0.5 0.2 0.8 0.55 501818 AD500-9 LCC6.1f Ø0.5 0.2 0.8 0.55 500031 AD500-9 TO52S1 Ø0.5 0.2 0.8 0.55 500590 AD500-9 TO52S1F2 Ø0.5 0.2 0.8 0.55 500306 AD500-9 TO52S2 Ø0.5 0.2 0.8 0.55 500156 AD500-9 TO52S3 Ø0.5 0.2 0.8 0.55 501196 AD800-9 TO52S1 Ø0.8 0.5 2 0.9 501197 AD1100-9 TO52S1 Ø1.13 1 4 1.3 501208 AD1500-9 TO5i Ø1.5 1.77 2 2 501198 AD3000-9 TO5i Ø3 7.07 30 2 500161 AD5000-9 TO8i Ø5 19.63 60 3 500756 AD230-9-400M TO5 AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package. 500490 AD500-9-400M TO5 AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package. Multi-Element Array 501099 8AA0.4-9 SOJ22GL APD Array 8 Elements, QE>80% at 760-910nm with NTC 501098 16AA0.13-9 SOJ22GL APD Array 16 Elements, QE>80% at 760-910nm with NTC 500038 16AA0.13-9 DIL18 APD Array 16 Elements, QE>80% at 760-910nm 501097 16AA0.4-9 SOJ22GL APD Array 16 Elements, QE>80% at 760-910nm 50130802 25AA0.04-9 BGA APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC 50130802 25AA0.16-9 BGA APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC 50130702 64AA0.04-9 BGA APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC 501207 QA4000-9 TO8Si Quadrant Avalanche Photodiode, QE>80% at 760-910nm Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources) Order # Type Active Area Dark Current Rise Time Chip Package Size Area M=100 M=100 1064nm mm mm2 nA ns 500953 AD500-10 TO5i Ø0.5 0.2 1.5 4 501233 AD800-10 TO5i Ø0.8 0.5 3 5 500883 AD1500-10 TO5i Ø1.5 1.77 7 5 50123401 AD4000-10 TO8Si Ø4 12.56 50 6 501387 AD800-10 TO8S High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA) Multi-Element Array 501174 QA4000-10 TO8Si Quadrant Avalanche Photodiode, High QE at 850-1070nm https://www.first-sensor.com/en/products/components/detectors/avalanche-photodiodes-apd www.NewOpto.com 相关商品 光电二极管 光电二极管模块 光电管接收模块 光电管放大器

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