SILICON TRANSISTOR
2SC3355

HIGH FREQUENCY LOW *ISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR

D*CRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.

• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage             VCBO                  20 V
Collector to Emitter Voltage          VCEO                 12 V
Emitter to Base Voltage                VEBO                 3.0 V
Collector Current                           IC                     100 mA
Total Power Dissipation                PT                      600 mW
Junction Temperature                   Tj                       150 C
Storage Temperature                    Tstg                 65 to +150 C

企业名：深圳市泰兴发电子有限公司

类型：生产企业

电话： 86 0755 61362389

联系人：许惠谦

地址：广东深圳中国广东深圳市福田区赛格广场1B094