SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR

FEATUR*
Very low equivalent on-resistance; RCE(sat)
=210mΩ at 1.5A
COMPLEMENTARY TYPE –  FMMTL618
PARTMARKING DETAIL –  L78

ABSOLUTE MAXIMUM RATINGS.
PARAMETER SY*OL VALUE UNIT
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -1 A
Peak Pulse Current ICM -2 A
Base Current IB -200 mA
Power Dissipation at Tamb =25°C Ptot
-500 mW
Operating and Storage Temperature Range Tj
:Tstg -55 to +150 °C

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