制造商Infineon
产品种类IGBT 模块
RoHS否
产品IGBT Silicon Modules
配置Dual
集电极—发射极电压 VCEO1200 V
集电极—射极饱和电压2.7 V
Continuous Collector Current at 25 C1200 A
栅极—射极漏泄电流400 nA
功率耗散7.8 KW
工作温度+ 125 C
封装 / 箱体IHM130
栅极/发射极电压+/- 20 V
工作温度- 40 C
安装风格SMD/SMT
标准包装:8
相关型号:
BSM35GB120DLC 35A/1200V/2U
BSM50GB120DLC 50A/1200V/2U
BSM75GB120DLC 75A/1200V/2U
BSM150GB170DLC 150A/1700V/2U
BSM100GB120(DLC 100A/1200V/2U
BSM150GB120DLC 150A/1200V/2U
BSM50GB170DN2 50A/1700V/2U
BSM100GB120DLCK 100A/1200V/2U
BSM200GB120DLC 200A/1200V/2U
BSM300GB120DLC 300A/1200V/2U