产品型号Item

GaN-FS-N

GaN-FS-SI

尺寸Dimensions

Ф 50.8mm ± 1mm

厚度Thickness

300 ± 25 µm

晶体取向Orientation

C-axis(0001) ± 0.5°

主定位边Orientation Flat

(1-100) ± 0.5°, 16.0 ± 1.0mm

次定位边Secondary Orientation Flat

(11-20) ± 3°, 8.0 ± 1.0mm

TTV(Total Thickness Variation)

≤15 µm

弯曲度BOW

≤20 µm

导电类型Conduction Type

N-type

Semi-Insulating

电阻率Resistivity(300K)

< 0.5 Ω·cm

>10⁶Ω·cm

位错密度Dislocation Density

Less than 5x10⁶cm^-2

有效面积Useable Surface Area

> 90%

抛光Polishing

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

产品型号Item

GaN-T-N

GaN-T-S

尺寸Dimensions

Ф 2”

厚度Thickness

15 µm, 20 µm, 30 µm, 40 µm

30 µm, 90 µm

晶体取向Orientation

C-axis(0001) ± 1°

导电类型Conduction Type

N-type

Semi-Insulating

电阻率Resistivity(300K)

< 0.05 Ω·cm

﹥10⁶Ω·cm

位错密度Dislocation Density

Less than 1x10⁸cm^-2

衬底结构Substrate structure

Thick GaN on Sapphire(0001)

有效面积Useable Surface Area

> 90%

抛光Polishing

Standard: SSP

Option: DSP

产品型号Item

GaN-FS-10

GaN-FS-15

尺寸Dimensions

10.0mm×10.5mm

14.0mm×15.0mm

厚度Thickness

Rank 300

300 ± 25 µm

Rank 350

350 ± 25 µm

Rank 400

400 ± 25 µm

晶体取向Orientation

C-axis(0001) ± 0.5°

TTV(Total Thickness Variation)

≤15 µm

弯曲度BOW

≤20 µm

导电类型Conduction Type

N-type

Semi-Insulating

电阻率Resistivity(300K)

< 0.5 Ω·cm

>10⁶Ω·cm

位错密度Dislocation Density

Less than 5x10⁶cm^-2

有效面积Useable Surface Area

> 90%

抛光Polishing

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

产品型号Item

GaN-FS-a

GaN-FS-m

尺寸Dimensions

5.0mm×5.5mm

5.0mm×10.0mm

5.0mm×20.0mm

Customized Size

厚度Thickness

300 ± 25 µm

晶体取向Orientation

a-plane ± 1°

m-plane ± 1°

TTV(Total Thickness Variation)

≤15 µm

弯曲度BOW

≤20 µm

导电类型Conduction Type

N-type

电阻率Resistivity(300K)

< 0.5 Ω·cm

位错密度Dislocation Density

Less than 5x10⁶cm^-2

有效面积Useable Surface Area

> 90%

抛光Polishing

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground