FC3355参数：高频低噪声NPN晶硅晶体管
FEATUR*：
Low Noise and High GainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHzNF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
High Power GainMAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base VoltageVCBO=20V
Collector to Emitter VoltageVCEO=12V
Emitter to Base VoltageVEBO=3.0V
Collector CurrentIC=100mA
Total Power DissipationPT=600mW
Junction TemperatureTj=150C
Storage TemperatureTstg=65 to 150C

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