PARAMETER

SY*OL

VALUE

UNIT

Collector-Base Voltage

VCBO

700

V

Collector-Emitter Voltage

VCEO

410

V

Emitter -Base Voltage

VEBO

9

V

Collector Current

IC

1.2

A

Total Power Dissipation

PC

25

W

Storage Temperature

Tstg

-65~150

℃

Junction Temperature

Tj

150

℃

Parameter

Symbol

Test Conditons

Min

Max

Unit

Collector-Base Breakdown Voltage

BVCBO

Ic=1mA,Ie=0

700

V

Collector-Emitter Breakdown Voltage

BVCEO

Ic=10mA,Ib=0

410

V

Emitter-Base Breakdown Voltage

BVEBO

Ie=1mA, Ic=0

9

V

Collector-Base Cutoff Current

ICBO

Vcb=700V,Ie=0

10

μA

Collector-Emitter Cutoff Current

ICEO

Vce=410V,Ib=0

10

μA

Emitter –Base Cutoff Current

IEBO

Veb=9V,Ic=0

15

μA

DC Current Gain

hFE(1)

Vce=5V,Ic=200mA

10

40

DC Current Gain

hFE(2)

Vce=5V,Ic=1mA

8

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=500mA,Ib=100mA

0.4

V

Base-Emitter Saturation Voltage

VBE(sat)

Ic=500mA,Ib=100mA

1.2

V

Storage Time

Ts

VCC=5V,IC=250mA,

(UI9600)

1.5

3.5

μS

Falling Time

Tf

0.8