K4B4G0846E-BCNB 原装DDR3

The DDR3 SDRAM is a high-speed CMOS, dynamic random-access memory internally configured as a eight-bank DRAM. The DDR3 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins

K4B4G0846E-BCNB 原装DDR3的技术参数：

制造商	SAMSUNG
RoHS	是
产品类别	DRAM动态随机存储器
温度规格	0°C to +85°C
速度	1066MHZ
容量	4GB
电压	1.5 V
脚位/封装	FBGA-78
无铅/环保	无铅/环保
标准包装数量	1280
Number Of Words	512M
Bit Organization	x8
Density	4G

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