H5AN4G6NBJR-UHI 原装 DDR4

4Gb DDR4 SDRAM  Lead-Free&Halogen-Free(RoHS Compliant)

 

H5AN4G6NBJR-UHI 原装 DDR4 的描述：

The H5AN4G6NBJR-xxI  are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

 

H5AN4G6NBJR-UHI 原装 DDR4 的技术参数：

制造商	SK HYNIX
容量	4GB
RoHS	是
工作电压	1.2V
工作温度	-40°C~+95°C
速率	1200Mbps
封装 / 箱体	FBGA 96 BALL
架构	256MX16

 

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