原装K4E6E304EC-EGCF LPDDR3 DRAM 

原装K4E6E304EC-EGCF LPDDR3 DRAM 的描述

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung￠s advanced CMOS process to realize high band-width, low power consumption and high reliability.

原装K4E6E304EC-EGCF LPDDR3 DRAM的技术参数：

制造商 SAMSUNG

容量 16GB

架构 512Mx32

速度 933MHZ

工作电压 1.8 / 1.2 / 1.2 V

Bus-Width       x32

Package      BGA

Pin/Ball Count    178

Max. Data-Rate     1866 MT/s

Temperature Range     -25 to 85°C TC

Automotive     No

Voltage     VDD1:1.8V/VDD2:1.2V/VDDQ:1.2V

RoHS-Compliant     Yes

全新原包原装可含税（香港可交）

KMGX6001BA-B514

KMGP6001BA-B514

KMFN60012M-B214

KMDX60018M-B425

KLMDG8JENB-B041

KLMCG4JETD-B041

KLMBG2JETD-B041

KLMAG1JETD-B041

KLM8G1GETF-B041

KLM4G1FETE-B041

K9F1G08U0E-SIB0

K4Z80325BC-HC14

K4E6E304EC-EGCF

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