原装 H9HCNNNBKMALHR-NEE LPDDR4

 

脚位/封装 FBGA-200

RoHS RoHS

无铅/环保 无铅/环保  

电压(伏) 1.1 V  

温度规格 -25°C~+85°C  

速度 1866 MHz  

Generation 2nd

Dram Voltage 1.1V/0.6V,LPDDR4

Nvm Option None

Dram Density 16Gb, DDP, 2Ch, 1CS

Nvm Speed none

Package Material Lead & Halogen Free

Product Mode LPDDR4 Only

 

The LPDDR4X is a new mobile DRAM standard that is an extension of the original LPDDR4, and is expected to reduce power consumption of the DRAM sub-system by 18~20% according to developers (everything else remains the same: a 200~266 MHz internal memory array frequency, 16n prefetch, etc.).

 To do that, LPDDR4X cuts output driver power (I/O VDDQ voltage) by 45%, from 1.1 V to 0.6 V. LPDDR4X is supported by a number of mobile SoC developers.

 

 The first application processor to support the new type of memory is MediaTek’s Helio P20 that was announced nearly a year ago and the initial devices powered by the chip are likely to hit the market in 1H 2017.

Another notable SoC to support LPDDR4X is Qualcomm’s new flagship Snapdragon 835, which was announced in November and detailed earlier this month. Smartphones featuring this chip will not show up for a while, but MWC just around the corner which lends nicely to various handset announcements.

 

全新原包原装可含税（香港可交）

H9HCNNNCPMALHR-NEE

H9HCNNNBPUMLHR-NMO

H9HCNNNBPUMLHR-NMN

H9HCNNNBKUMLHR-NME

H9HCNNNBKMALHR-NEE

H9HCNNN8KUMLHR-NLN

H9CCNNNCPTALBR-NUD

H9CCNNNBKTALBR-NUD

H9CCNNNBJTALAR-NUD

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