原装H5TQ4G63EFR-TEC 4Gb DDR3 SDRAM

DRAM Chip DDR3 SDRAM 4G-Bit 256M x 16 1.5V 96-Pin FPBGA

Lead-Free&Halogen-Free

(RoHS Compliant)

 

原装H5TQ4G63EFR-TEC 4Gb DDR3 SDRAM的技术参数：

Number of I/O Lines 16 Bit

Operating Supply Voltage 3.3 V

Operating Temperature  0 to 95 °C

Organization 256M x 16

Pin Count    96

Product Dimensions 13 x 7.5 x 0.76 mm

Screening Level Commercial

Supplier Package FPBGA

Type   DDR3 SDRAM

 

原装H5TQ4G63EFR-TEC 4Gb DDR3 SDRAM的描述：

The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC,are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

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