TC58BVG1S3HTA00 原装 NAND FLASH

2Gbit BENAND, 3.3V, x8, 24nm, TSOP

 TOSHIBA /KIOXIA东芝，铠侠 BENAND (Built-in ECC SLC NAND)

 

TC58BVG1S3HTA00 原装 NAND FLASH的技术参数：

容量 (bit)	2G
I/O (bit)	8
RoHS	是
封装	TSOP
针脚数	48
尺寸	12mm x 20mm
访问时间(1st access) (Max)	120μs
访问时间 (Serial Cycle) (Min)	25nsec
工作温度	0 to 70℃
电源电压	2.7 to 3.6V

 

 

TC58BVG1S3HTA00 原装 NAND FLASH的描述：

The TC58BVG1S3HTA00 is a single 3.3V 2Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes ′ 64 pages ′ 2048 blocks.

 

The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes ′ 64 pages).

 

 

The TC58BVG1S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.

 

 The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

 

The TC58BVG1S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.

 

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