TC58BVG0S3HBAI4  Nand Flash

铠侠企业级存储器 集成电路IC  串行型存储器设备  (9mm x 11mm )

 

 

TC58BVG0S3HBAI4  Nand Flash 的技术参数：

容量 (bit)	1G
Tech. node (nm)	24
Block size (bit)	(128K+4K)×8
I/O (bit)	8
描述	1Gbit BENAND, 3.3V, x8, 24nm, BGA
RoHS	是
封装	FBGA-63
温度规格	-40 to 85 °C
电源电压	2.7 to 3.6 V
Design rule	24nm

 

TC58BVG0S3HBAI4  Nand Flash的描述：

 

The   TC58BVG0S3HBAI4   is   a   single   3.3V   1Gbit (1,107,296,256   bits)   NAND   Electrically   Erasable   and Programmable Read-Only  Memory (NAND  E2PROM)  organized as (2048 +64)  bytes ′64 pages ′1024blocks.

 

The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes +4 Kbytes: 2112 bytes ′64 pages).

 

The  TC58BVG0S3HBAI4  is  a  serial-type  memory  device  which  utilizes  the  I/O  pins  for  both  address  and  data input/output as well as for command inputs. The Erase and Program operations are automatically executed,making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

 

 

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