H5AN4G6NAFR-UHC 原装 DDR4

DRAM Chip DDR4 SDRAM 4G-Bit 256M X 16 1.2V 96-Pin FPBGA

 

H5AN4G6NAFR-UHC 原装 DDR4 的技术参数：

脚位/封装	FBGA-96
外包装	TRAY
无铅/环保	无铅/环保
电压(伏)	1.2V
温度规格	0°C~+95°C
速度	1200 MHZ
Number Of Words	256M
Bit Organization	x16
Density	4G
Operating Temperature	commercial temperature(0°C ~ 85°C) & normal power
Package Material	lead & halogen free(ROHS compliant)
Hynix Memory	H
Die Generation	2nd
No Of Banks	Non-TSV
Product Family	DRAM
Shipping Method	tray

 

H5AN4G6NAFR-UHC 原装 DDR4 的描述：

The H5AN4G4NBJR-xxC, H5AN4G8NBJR-xxC and H5AN4G6NBJR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

企业名：深圳市迅丰达电子科技有限公司

类型：贸易/代理/分销

电话： 13824331138

手机：13824331138

联系人：陈小姐

QQ：

微信：

邮箱：491961368@qq.com

地址：广东深圳赛格广场3504A