H5AN8G6NAFR-UHC  原装  DDR4

8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

 

脚位/封装	FBGA
外包装	TRAY
无铅/环保	无铅/环保
电压(伏)	1.2V
温度规格	0°C~+95°C
速度	1200 MHZ
标准包装数量	1600
Number Of Words	512M
Bit Organization	x16
Density	8G
Operating Temperature	commercial temperature(0°C ~ 85°C) & normal power
Package Material	lead & halogen free(ROHS compliant)
Hynix Memory	H
Die Generation	2nd
No Of Banks	Non-TSV
Product Family	DRAM
Shipping Method	tray

 

 

The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

企业名：深圳市迅丰达电子科技有限公司

类型：贸易/代理/分销

电话： 13824331138

手机：13824331138

联系人：陈小姐

QQ：

微信：

邮箱：491961368@qq.com

地址：广东深圳赛格广场3504A