MT47H64M16NF-25E:M 原装 DDR2

动态随机存取存储器 DDR2 1G 64MX16 FBGA

 

MT47H64M16NF-25E:M 原装 DDR2 的技术参数：

制造商:	Micron Technology
产品种类:	动态随机存取存储器
RoHS:	是
类型:	SDRAM - DDR2
安装风格:	SMD/SMT
封装 / 箱体:	FBGA-84
数据总线宽度:	16 bit
存储容量:	1 Gbit（64 M x 16）
（max）时钟频率:	400 MHz
访问时间:	400 ps
电源电压-:	1.7 V to 1.9 V
电源电流（max）:	95 mA
工作温度:	0 C  to  + 85 C
封装:	Tray
商标:	Micron
湿度敏感性:	Yes
产品类型:	DRAM

 

MT47H64M16NF-25E:M 原装 DDR2 的描述：

The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.

 

A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS,UDQS#).

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