K4AAG085WB-MCPB 原装 DDR4 16GB

DDP 16Gb B-die DDR4 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)

 

The DDP 16Gb DDR4 SDRAM B-die is organized as a 128Mbit x 8 I/Os x 16banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applications. The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The DDP 16Gb DDR4 B-die device is available in 78ball FBGAs(x8).

 

K4AAG085WB-MCPB 原装 DDR4 16GB 的技术参数：

制造商	SAMSUNG
架构	2G*8
容量	16 GB
温度	0~85°C
速度	2133 Mbps
工作电压	1.2v
封装	FBGA-78
外包装	TRAY

 

 

 

 

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