K4T1G084QF-BCE6 原装 DDR2

1Gb F-die DDR2 SDRAM   with Lead-Free & Halogen-Free (RoHS compliant)

 

制造商	SAMSUNG
RoHS	是
容量	1GB
封装 / 箱体	FBGA-60
速度	800Mbps
架构	128M*8
类别	集成电路（IC） 存储器

 

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

 

 

The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

 

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. For example, 1Gb(x8) device

receive 14/10/3 addressing.

 

The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ. The 1Gb DDR2 device is available in 60ball FBGA(x4/x8) and in 84ball FBGA(x16).

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