isc/iscsemi/2SA1186
放大
大功率
超高频
PNP型
TO-3PN
塑料封装
-10(A)
100(W)
厂家直销
热销
合金型
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:刘玲玲
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
MT-100供应2SA1186三极管,有意者请联系!DESCRIPTION
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min)·Good Linearity of hFE·Complement to Type 2SC2837
APPLICATIONS·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-150VVCEOCollector-Emitter Voltage
-150VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-10AIBBase Current-Continuous-2APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -25mA ; IB= 0-150
VVCE(sat)Collector-Emitter Saturation VoltageIC= -5.0A; IB= -0.5A
-2.0VICBOCollector Cutoff CurrentVCB= -150V ; IE=0
-100μAIEBOEmitter Cutoff CurrentVEB= -5V; IC=0
-100μAhFEDC Current GainIC= -3A ; VCE= -4V50 180 COBOutput CapacitanceIE= 0 ; VCB= -80V;f=
1.0MHz 110 pFfTCurrent-Gain—Bandwidth ProductIE= 1A ; VCE= -12V 60 MHzSwitching timestonTurn-on TimeIC= -5A ,RL= 12Ω,IB1= -IB2= -0.5A,VCC=-60V 0.25 μststgStorage Time 0.8 μstfFall Time 0.2 μs u
hFEClassificationsO:50-80O50O60O7-80P:80-130P80P90P100P110P1200-110Y:130-180Y130Y140Y150Y160Y170170-180
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:刘玲玲
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号