是
ISC
2SB502
放大
硅(Si)
PNP型
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ： 
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·High Power Dissipation-
: PC= 25W(Max)@TC=25℃
APPLICATIONS
·Designed for audio power amplifier and regulator
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -110 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -8 | V |
IC | Collector Current-Continuous | -3 | A |
IE | Emitter Current-Continuous | 3 | A |
PC | Collector Power Dissipation @Ta=25℃ | 1.5 | W |
Collector Power Dissipation @TC=25℃ | 25 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -0.1A; IB= 0 | -80 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -2mA; IE= 0 | -110 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -10mA; IC= 0 | -8 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -1.8 | V |
ICBO | Collector Cutoff Current | VCB= -50V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -8V; IC= 0 |
|
| -100 | μA |
hFE-1 | DC Current Gain | IC= -0.5A; VCE= -5V | 30 |
| 280 |
|
hFE-2 | DC Current Gain | IC= -2.5A; VCE= -5V | 15 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 200 |
| pF |
u hFEClassifications
R | O | Y |
30-70 | 50-140 | 100-280 |
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ：
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
