无锡固电ISC供应2N5738三极管

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DESCRIPTION

·Collector-Emitter Sustaining Voltage-

:V_CEO(SUS)= -100V(Min.)

·Low Collector Saturation Voltage-

: V_CE(sat)= -0.5V(Max.)@ I_C= -5A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for general-purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-100	V
V_CEO	Collector-Emitter Voltage	-100	V
V_EBO	Emitter-Base Voltage	-5	V
I_C	Collector Current-Continuous	-10	A
I_CM	Collector Current-Peak	-20	A
I_B	Base Current-Continuous	-4	A
P_C	Collector Power Dissipation @T_C=100℃	50	W
T_J	Junction Temperature	150	℃
T_stg	Storage Temperature	-65~200	℃

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
R_{th j-a}	Thermal Resistance,Junction to Ambient	0.5	℃/W

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= -200mA ; I_B= 0	-100		V
V_CE_(sat)-1	Collector-Emitter Saturation Voltage	I_C= -5A; I_B= -0.5A		-0.5	V
V_CE_(sat)-2	Collector-Emitter Saturation Voltage	I_C= -10A; I_B= -2.5A		-3.0	V
V_BE(_sat₎	Base-Emitter Saturation Voltage	I_C= -5A; I_B= -0.5A		-1.2	V
V_BE(_on₎	Base-Emitter On Voltage	I_C= -4A; V_CE= -4V		-1.5	V
I_CEO	Collector Cutoff Current	V_CE= -100V; I_B= 0		-0.5	mA
I_CBO	Collector Cutoff Current	V_CB= -100V; I_E= 0		-0.1	mA
I_EBO	Emitter Cutoff Current	V_EB= -5V; I_C= 0		-0.1	mA
h_FE-1	DC Current Gain	I_C= -5A; V_CE= -5V	20	80
h_FE-2	DC Current Gain	I_C= -10A; V_CE= -5V	4
f_T	Current-Gain—Bandwidth Product	I_C= -0.5A; V_CE= -10V	10		MHz