SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-130

V

V_CER

Collector-Emitter Voltage R_BE= 100Ω

-130

V

V_CEO

Collector-Emitter Voltage                        

-120

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-4

A

I_B

Base Current

-2

A

P_D

Collector Power Dissipation

@ T_C=25℃

40

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

3.125

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -100mA; I_B= 0

-120

V

V_CER

Collector-Emitter Sustaining Voltage

I_C= -100mA;R_BE= 100Ω

-130

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= -1.5A; I_B= -0.15A

-1.2

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= -4A; I_B= -2A

-2.5

V

V_BE(on)-1

Base-Emitter On Voltage

I_C= -1.5A; V_CE= -4V

-2.0

V

V_BE(on)-2

Base-Emitter On Voltage

I_C= -4A; V_CE= 2.5V

-3.5

V

I_CEV

Collector Cutoff Current

V_CE= -120V; V_BE(off)= -1.5V

V_CE= -120V; V_BE(off)= -1.5V; T_C=100℃

-0.1

-2.0

mA

I_CER

Collector Cutoff Current

V_CE= -130V;R_BE= 100Ω

V_CE= -130V;R_BE= 100Ω; T_C=100℃

-0.1

-2.0

mA

I_CEO

Collector Cutoff Current

V_CE= -60V; I_B= 0

-1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-1.0

mA

h_FE-1

DC Current Gain

I_C= -1.5A; V_CE= -4V

15

150

h_FE-2

DC Current Gain

I_C= -4A; V_CE= -2.5V

2

C_OB

Collector Output Capacitance

I_E= 0; V_CB= -10V, f_test= 1MHz

250

pF

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A; V_CE= -4V

5

MHz