AFT20P140-4WNR3

射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV9 2GHz 24W OM780-4

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

1880--2025 MHz, 24 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS

These AFT20P140-4WNR3 24 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 MHz.

Features AFT20P140-4WNR3

• Designed for wide instantaneous bandwidth applications

• Greater negative gate--source voltage range for improved Class C operation

• Able to withstand extremely high output VSWR and broadband operating conditions

• Designed for digital predistortion error correction systems

• In tape and reel. R3 suffix = 250 units, 32 mm tape width, 13--inch reel.

型号: AFT20P140-4WNR3

制造商: NXP 

企业名：深圳市中立信电子科技有限公司

类型：贸易/代理/分销

电话： 0755-23956688
0755-23956688

手机：13410226883

联系人：叶先生/王先生

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邮箱：Lee@zlxele.com

地址：广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室