MMUN2214LT1G
ON(安森美)
SOT-23
无铅环保型
贴片式
卷带编带包装
NPN型
0.1 A
100 mA
246 mW
10 kOhms
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
MMUN2214LT1G
Digital Transistors (BRT) R1 = 10 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network
双极晶体管 - 预偏置 100mA 50V BRT NPN
MMUN2214LT1G This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
MMUN2214LT1G Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
型号: MMUN2214LT1G
制造商: ON Semiconductor
产品种类: 双极晶体管 - 预偏置
RoHS: 无铅环保
配置: Single
晶体管极性: NPN
典型输入电阻器: 10 kOhms
典型电阻器比率: 0.21
安装风格: SMD/SMT
封装 / 箱体: SOT-23-3
直流集电极/Base Gain hfe Min: 80
集电极—发射极电压 VCEO: 50 V
集电极连续电流: 0.1 A
峰值直流集电极电流: 100 mA
Pd-功率耗散: 246 mW
工作温度: - 55 ℃
工作温度: + 150 ℃
系列: MMUN2214L
封装: Cut Tape
包装: Reel
直流电流增益 hFE 值: 80
高度: 0.94 mm
长度: 2.9 mm
宽度: 1.3 mm
商标: ON Semiconductor
CNHTS: 8541210000
HTS Code: 8541210095
MXHTS: 85412101
产品类型: BJTs - Bipolar Transistors - Pre-Biased
资格: AEC-Q101
工厂包装数量: 3000
子类别: Transistors
TARIC: 8541210000
单位重量: 8 mg
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室