我司专营ISSI进口原装存储器，欢迎联系。QQ:2851185157

The IS34/35ML4G081 is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V Vcc

Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage

market. The memory is divided into blocks that can be erased independently so it is possible to preserve

valid data while old data is erased.

The device contains 4,096 blocks, composed by 64 pages consisting in two NAND structures of 32

series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 400us

and an erase operation can be performed in typical 2ms on a 128K-Byte for X8 device block.

Data in the page mode can be read out at 25ns cycle time per Word. The I/O pins serve as the ports for

address and command inputs as well as data input/output.

The copy back function allows the optimization of defective blocks management: when a page program

operation fails, the data can be directly programmed in another page inside the same array section

without the time consuming serial data insertion phase.

The cache program feature allows the data insertion in the cache register while the data register is

copied into the Flash array.

This pipelined program operation improves the program throughput when long files are written inside

the memory. A cache read feature is also implemented. This feature allows to dramatically improving

the read throughput when consecutive pages have to be streamed out. This device includes extra

feature: Automatic Read at Power Up.

 

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