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TheISSIIS61C5128AL/ASandIS64C5128AL/ASarehighspeed,

4,194,304-bit static RAMs organized as 524,288

words by 8 bits. They are fabricated using ISSI's highperformanceCMOStechnology.Thishighly

reliableprocess

coupled with innovative circuit design techniques, yields

access times as fast as 12 ns with low power consumption.

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be reduced

down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

TheIS61C5128AL/ASandIS64C5128AL/ASarepackaged

intheJEDECstandard36-pinSOJ(400-mil),32-pinsTSOP-I,

32-pin SOP, 44-pin TSOP-II and 32-pin TSOP-II packages

企业名：深圳市轩成微电子有限公司

类型：贸易/代理/分销

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