si
13001
功率
硅(Si)
NPN型
600（V）
0.25（A）
0.8（W）
8（MHz）
平面型
TO-92
塑料封装
企业名：深圳市威国科技发展有限公司
类型：生产加工
电话： 755-33060028
联系人：莫建群
地址：广东深圳福田区上梅林中康南路雕塑家园1202室
厂家**.欢迎来电咨询！
JE13001 TRANSISTOR(NPN)
1:FEATUR*
Power switching applications
2:MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
symbol | parameter | value | units |
Vcbo | Collector-Base Voltage | 600 | V |
Vceo | Collector-Emitter Voltage | 400 | V |
Vebo | Emitter-Base Voltage | 9 | V |
Ic | Collector Current-Continuous | 0.25 | A |
Pc | Collector Power Dissipation | 0.8 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
3:ELE*RICAL CHARA*ERISTICS (Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)cbo | IC=100uA IE=0 | 600 |
|
| V |
Collector-emitter breakdown voltage | V(BR)ceo | IC=1mA IB=0 | 400 |
|
| V |
Emitter-base breakdown voltage | V(BR)ebo | IE=100uA IC=0 | 9 |
|
| V |
Collector cut-off Current | Icbo | Vcb=600V IE=0 |
|
| 100 | uA |
Collector cut-off Current | Iceo | Vce=400V IB=0 |
|
| 200 | uA |
Emitter cut-off Current | Iebo | Veb=9V IC=0 |
|
| 100 | uA |
DC Current gain | hEF(1) | Vce=20VIC=20 mA | 10 |
| 40 |
|
hEF(2) | Vce=10VIC=0.25mA | 5 |
|
|
| |
Collector-emitter saturation voltage | VCE(sat) | IC=50mA IB=10 mA |
|
| 0.5 | V |
Base -emitter saturation voltage | VBE(sat) | IC=50mA IB=10 mA |
|
| 1.2 | V |
Transition frequency | fT | Vce=20VIC=20 mA f=1MHZ | 8 |
|
| MHZ |
Fall time | tf | VCC=45V IC=50Ma IB1=-IB2=5mA |
|
| 0.3 | US |
Storage time | ts |
|
| 1.5 | US |
4:CLASSIFICATION OF hEF(1)
Rank |
| |||||
Range | 10-15 | 15-20 | 20-25 | 25-30 | 30-35 | 35-40 |
友情链接： 深圳市元东发电子有限公司
