• 型号：MJ21196 MJ21196 MJ21196
  制造商：ON Semiconductor
  产品种类：Transistors Bipolar (BJT)
  晶体管极性：PNP
  集电极—发射极电压 VCEO：250 V
  发射极 - 基极电压 VEBO：5 V
  直流电集电极电流：16 A
  直流集电极/Base Gain hfe Min：25
  配置：Single
  工作频率：4 MHz
  工作温度：+ 150 C
  安装风格：Through Hole
  封装 / 箱体：TO-204-2 (TO-3)
  封装：Tray
  集电极连续电流：16 A
  工作温度：- 65 C
  功率耗散：250 W
  工厂包装数量：100
  描述：MJ21195和MJ21196利用多孔发射极技术并专为高功率音频输出，磁头设计定位器和线性应用
  
  

• The MJ21195G and MJ21196G utilize Perforated Emitter

  technology and are specifically designed for high power audio output,

  disk head positioners and linear applications.

  Features

  • Total Harmonic Distortion Characterized

  • High DC Current Gain

  • Excellent Gain Linearity

  • High SOA

  • These Devices are Pb−Free and are RoHS Compliant*

  
• 
• 

• Stresses exceeding Maximum Ratings may damage the device. Maximum

  Ratings are stress ratings only. Functional operation above the Recommended

  Operating Conditions is not implied. Extended exposure to stresses above the

  Recommended Operating Conditions may affect device reliability.

  1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤10%.

  
  

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