型号：MJE243 MJE243G MJE243G
制造商：ON Semiconductor
厂家：ISC [Inchange Semiconductor Company Limited]
描述：isc Silicon NPN Power Transistor 
产品种类：Transistors Bipolar (BJT)
晶体管极性：NPN
集电极—发射极电压 VCEO：100 V
发射极 - 基极电压 VEBO：7 V
直流电集电极电流：4 A
直流集电极/Base Gain hfe Min：40
配置：Single
工作频率：40 MHz
工作温度：+ 150 C
安装风格：Through Hole
封装 / 箱体：TO-225-3
封装：Bulk
集电极连续电流：4 A
工作温度：- 65 C
功率耗散：15 W
工厂包装数量：500
描述：MJE243是专为低功耗音频放大器和低电流，高速开关应用 。

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

Features

• High Collector−Emitter Sustaining Voltage

• High DC Current Gain

• Low Collector−Emitter Saturation Voltage

• High Current Gain Bandwidth Product

• Annular Construction for Low Leakages

• These Devices are Pb−Free and are RoHS Compliant*

MJE243G TO−225(Pb−Free) 500 Units/Box

MJE253G TO−225(Pb−Free) 500 Units/Box

                                       MJE243G (NPN), MJE253G (PNP)

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES1KI

企业名：深圳市勤思达科技有限公司

类型：贸易/代理/分销

电话： 0755-83264115
0755-82710921

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