TLP351

General Descriptio: 

The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs.

Features: 

• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : IF = 5 mA (max)
• Switching time (tpLH/tpHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/μs
• Isolation voltage: 3750 Vrms
• Option(D4)

VDE Approved : DIN EN60747-5-2

Maximum Operating Insulation Voltage: 890VPK
Highest Permissible Over Voltage: 4000VPK

企业名：荣盛电子(香港)有限公司

类型：贸易/代理/分销

电话： 0755-82819399

手机：13530050576

联系人：蔡小姐

QQ：

邮箱：hkrongsheng@163.com

地址：广东深圳门市：新亚洲电子市场一期4C005 公司：福田区中航路鼎城2203