AO3414 / A03414

N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. Standard Product AO3414 is Pb-free (meets ROHS & Sony 259 specifications). AO3414L
is a Green Product ordering option. AO3414 and AO3414L are electrically identical.

Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
RDS(ON) < 87mΩ (VGS = 1.8V)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter	Symbol	Symbol	Units
Drain-Source Voltage	VDS	20	V
Gate-Source Voltage	VGS	±8	V
Continuous Drain Current           TA=25°C                                                  TA=70°C	ID	4.2 3.2	A
Pulsed Drain Current	IDM	15	A
Power Dissipation                       TA=25°C                                                   TA=70°C	PD	1.4 0.9	W
Junction and Storage Temperature Range	TJ, TSTG	-55 to 150	V

Thermal Characteristics

Parameter	Symbol	Typ	Max	Units
Maximum Junction-to-Ambient                  t ≤ 10s	RθJA	70	90	°C/W
aximum Junction-to-Ambient                   Steady-State	RθJA	100	125	°C/W
Maximum Junction-to-Lead                      Steady-State	RθJL	63	80	°C/W

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