2SK3018

Transistor

Small switching (30V, 0.1A)

Applications: 
Interfacing, switching (30V, 100mA)

Features: 
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.

Structure: 
Silicon N-channel
MOSFET

Absolute maximum ratings (Ta=25°C)

Parameter	Symbol	Limits	Unit
Drain-source voltage	VDSS	30	V
Gate-source voltage	VGSS	±20	V
Drain current         Continuous Pulsed	ID IDP∗1	±100 ±400	mA mA
Total power dissipation (Tc=25°C)	PD∗2	200	mW
Channel temperature	Tch	150	°C
Storage temperature	Tstg	−55 to +150	°C

Electrical characteristics (Ta=25°C)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Gate-source leakage	IGSS	−	−	±1	μA	VGS = ±20V, VDS = 0V
Drain-source breakdown voltage	V(BR)DSS	30	−	−	V	ID = 10μA, VGS = 0V
Zero gate voltage drain current	IDSS	−	−	1	μA	VDS = 30V, VGS = 0V
Gate threshold voltage	VGS(th)	0.8	−	1.5	V	VDS = 3V, ID = 100μA
Static drain-source on-state resistance	RDS(on) RDS(on)	− −	5 7	8 13	Ω Ω	ID = 10mA, VGS = 4V ID = 1mA, VGS = 2.5V
Forward transfer admittance	|Yfs |	20	−	−	mS	VDS = 3V, ID = 10mA
Input capacitance	Ciss	−	13	−	pF	VDS = 5V
Output capacitance	Coss	−	9	−	pF	VGS = 0V
Reverse transfer capacitance	Crss	−	4	−	pF	f = 1MHz
Turn-on delay time	td(on)	−	15	−	ns	ID = 10mA, VDD 5V
Rise time	tr	−	35	−	ns	VGS = 5V
Turn-off delay time	td(off)	−	80	−	ns	RL = 500Ω
Fall time	tr	−	80	−	ns	RG = 10Ω

企业名：荣盛电子(香港)有限公司

类型：贸易/代理/分销

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