4G
96-TFBGA
DRAM
0°C ~ 95°C(TC)
1.14V ~ 1.26V
企业名:深圳市合芯力科技有限公司
类型:贸易/代理/分销
电话: 0755-83262205
手机:13480978628
联系人:欧小姐
邮箱:hexinli18@hotmail.com
地址:广东深圳深圳市福田区振兴西路101号华匀大厦B座525
MT40A256M16GE-083E:B MT40A256M16GE-083E:B MT40A256M16GE-083E:B MT40A256M16GE-083E:B
存储器类型 易失
存储器格式 DRAM
技术 SDRAM - DDR4
存储容量 4Gb (256M x 16)
存储器接口 并联
时钟频率 1.2GHz
写周期时间 - 字,页 -
电压 - 电源 1.14V ~ 1.26V
工作温度 0°C ~ 95°C(TC)
安装类型 表面贴装型
封装/外壳 96-TFBGA
供应商器件封装 96-FBGA(9x14)
Features
• VDD = VDDQ = 1.2V ±60mV
• VPP = 2.5V, –125mV/+250mV
• On-die, internal, adjustable VREFDQ generation
• 1.2V pseudo open-drain I/O
• TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
• 16 internal banks (x4, x8): 4 groups of 4 banks each
• 8 internal banks (x16): 2 groups of 4 banks each
• 8n-bit prefetch architecture
• Programmable data strobe preambles
• Data strobe preamble training
• Command/Address latency (CAL)
• Multipurpose register READ and WRITE capability
• Write leveling
• Self refresh mode
• Low-power auto self refresh (LPASR)
• Temperature controlled refresh (TCR)
• Fine granularity refresh
• Self refresh abort
• Maximum power saving
• Output driver calibration
• Nominal, park, and dynamic on-die termination
(ODT)
• Data bus inversion (DBI) for data bus
• Command/Address (CA) parity
• Databus write cyclic redundancy check (CRC)
• Per-DRAM addressability
• Connectivity test
• sPPR and hPPR capability
• JEDEC JESD-79-4 compliant
Options1 Marking
• Operating temperature
– Commercial (0° ื TC ื 95°C) None
– Industrial (–40° ื TC ื 95°C) IT
– Revision :A
企业名:深圳市合芯力科技有限公司
类型:贸易/代理/分销
电话: 0755-83262205
手机:13480978628
联系人:欧小姐
邮箱:hexinli18@hotmail.com
地址:广东深圳深圳市福田区振兴西路101号华匀大厦B座525
友情链接: 深圳市元东发电子有限公司