安森美半导体的新型场截止沟槽 IGBT 系列采用创新的场截止沟槽 IGBT 技术，为太阳能逆变器、UPS、焊接机和 PFC 等硬开关应用提供zui佳性能。

特性
FS 沟道技术，正温度系数
高速开关
低饱和电压： VCE(sat)= 1.8 V @ IC = 40 A
ILM(1)部件100%检测
高输入阻抗
符合 RoHS 标准

IGBT - Field Stop, Trench
1200 V, 40 A
FGH40T120SMD,
FGH40T120SMD-F155
Description
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer
the optimum performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Solar Inverter, Welder, UPS & PFC applications

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