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MEM2301 半导体场效应晶体管IC

MEM2301 半导体场效应晶体管IC
MEM2301 半导体场效应晶体管IC
  • 型号/规格:

    MEM2301

  • 品牌/商标:

    ME

  • 封装:

    SOT/SOP

  • 批号:

    全新原装

  • 价格:

    0.5/个

VIP会员 第 11
  • 企业名:深圳市亿创微芯电子有限公司

    类型:

    电话: 0755-83538626

    手机:15815503065

    联系人:李娜娜

    QQ: QQ:2232785377QQ:2935710643

    微信:

    邮箱:elemchip@126.com

    地址:广东深圳中国 广东 深圳市民治东边大厦701-702

产品分类
商品信息 更新时间:2024-08-12

MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.

Typical ApplicationAbsolute Maximum RatingsParameter Symbol Ratings UnitDrain-Source Voltage VDSS -20 VGate-Source Voltage VGSS ±8 VContinuous Drain CurrentTA=25℃ID-2.8ATA=70℃ -1.8Pulsed Drain Current1,2 IDM -10 ATotal Power DissipationTA=25℃PD0.7WTA=70℃ 0.45Operating Temperature Range TOpr 150 ℃Storage Temperature Range Tstg -65/150 ℃MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.? -20V/-2.8ARDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8ARDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A? High Density Cell Design For Ultra Low On-Resistance? Subminiature surface mount package:SOT23? Power management? Load switch? Battery protection 
Typical ApplicationAbsolute Maximum RatingsParameter Symbol Ratings UnitDrain-Source Voltage VDSS -20 VGate-Source Voltage VGSS ±8 VContinuous Drain CurrentTA=25℃ID-2.8ATA=70℃ -1.8Pulsed Drain Current1,2 IDM -10 ATotal Power DissipationTA=25℃PD0.7WTA=70℃ 0.45Operating Temperature Range TOpr 150 ℃Storage Temperature Range Tstg -65/150 ℃MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.? -20V/-2.8ARDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8ARDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A? High Density Cell Design For Ultra Low On-Resistance? Subminiature surface mount package:SOT23? Power management? Load switch? Battery protection 半导体场效应晶体管IC 半导体场效应晶体管IC 半导体场效应晶体管IC 半导体场效应晶体管IC

联系方式

企业名:深圳市亿创微芯电子有限公司

类型:

电话: 0755-83538626

手机:15815503065

联系人:李娜娜

QQ: QQ:2232785377QQ:2935710643

微信:

邮箱:elemchip@126.com

地址:广东深圳中国 广东 深圳市民治东边大厦701-702

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