MEM2301
ME
SOT/SOP
全新原装
0.5/个
企业名:深圳市亿创微芯电子有限公司
类型:
电话: 0755-83538626
手机:15815503065
联系人:李娜娜
微信:
邮箱:elemchip@126.com
地址:广东深圳中国 广东 深圳市民治东边大厦701-702
MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.
Typical ApplicationAbsolute Maximum RatingsParameter Symbol Ratings UnitDrain-Source Voltage VDSS -20 VGate-Source Voltage VGSS ±8 VContinuous Drain CurrentTA=25℃ID-2.8ATA=70℃ -1.8Pulsed Drain Current1,2 IDM -10 ATotal Power DissipationTA=25℃PD0.7WTA=70℃ 0.45Operating Temperature Range TOpr 150 ℃Storage Temperature Range Tstg -65/150 ℃MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.? -20V/-2.8ARDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8ARDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A? High Density Cell Design For Ultra Low On-Resistance? Subminiature surface mount package:SOT23? Power management? Load switch? Battery protection
Typical ApplicationAbsolute Maximum RatingsParameter Symbol Ratings UnitDrain-Source Voltage VDSS -20 VGate-Source Voltage VGSS ±8 VContinuous Drain CurrentTA=25℃ID-2.8ATA=70℃ -1.8Pulsed Drain Current1,2 IDM -10 ATotal Power DissipationTA=25℃PD0.7WTA=70℃ 0.45Operating Temperature Range TOpr 150 ℃Storage Temperature Range Tstg -65/150 ℃MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.? -20V/-2.8ARDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8ARDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A? High Density Cell Design For Ultra Low On-Resistance? Subminiature surface mount package:SOT23? Power management? Load switch? Battery protection 半导体场效应晶体管IC 半导体场效应晶体管IC 半导体场效应晶体管IC 半导体场效应晶体管IC
企业名:深圳市亿创微芯电子有限公司
类型:
电话: 0755-83538626
手机:15815503065
联系人:李娜娜
微信:
邮箱:elemchip@126.com
地址:广东深圳中国 广东 深圳市民治东边大厦701-702