NPN TRANSISTOR 8050S

0.5A


null Power Dissipation: 0.625W

null Collector Current: 0.5A

null Collector-Base Voltage:: 45V
TO-92

MAXIMUM RATINGS AND ELE*RICAL CHARA*ERISTICS（ Ta=25℃）

PARAMETERS SY*OL MIN TYP MAX UNIT CONDITION
Collector-Emitter Breakdown Voltage BVceo 2 5 V Ic=0.1mA
Collector-Base Breakdown Voltage BVcbo 45 V Ic=100u A
Emitter-Base Breakdown Voltage BVebo 5 V Ie=100μ A
Collector-Base Leakage Icbo 0.1 uA Vcb=40V
Collector-Emitter Leakage Iceo 0.1 uA Vce=20V
Emitter-Base Leakage Iebo 0.1 uA Veb=5V
Collector-Emitter Saturation Voltage Vce(sat） 0.6 V Ic=500mA, Ib=50mA
Base-Emiiter Saturation Voltage Vbe(sat) 1.2 V Ic=500mA, Ib=50mA
DC Current Gain Hfe1
Hfe2
85
50
3 0 0 Vce=1V,Ic=50mA
Vce=1V,Ic=500mA
Collector Current Ic 0.5 A
Peak Collector Current Icp 8 A(Pulse)
Current Gain Bandwidth fT 150 MHz Vcb=6V, Ic=20mA
Output Capacitance Cob 32 pF Vcb=20V,Ie=0,f=1MHz
Power Dissipation Pc 0.625 W
Junction Temperature Tj 150 ℃
Storage Temperature Tstg -55 150 ℃

Hfe1 Cl*ification
Rank B C D
Range -300