Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V and 5V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Output source/sink current capability 1.4A/1.8A

• Also available LEAD-FREE (PbF)

Description
The IR2184(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with dependent high and low
side referenced output channels. Proprietary
HVIC and latch immune
CMOS technologies enable ruggedized
monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts

 

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地址：广东深圳深圳市深南东路金城大厦3-10-A//柜台:深圳市华强北路新华强电子世界Q3B026室