isc/iscsemi/TIP122
达林顿
大功率
超高频
NPN型
TO-220
塑料封装
5(A)
65(W)
厂家直销
热销
平面型
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION·High DC Current Gain-: hFE= 1000(Min)@IC=3A·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)·Low Collector-Emitter Saturation Voltage- :VCE(sat)=
2.0V(Max)@ IC=3A=
4.0V(Max)@ IC=5A·Complement to Type TIP127 APPLICATIONS·Designed for general purpose amplifier and low speedswitching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage100VVCEOCollector-Emitter Voltage100VVEBOEmitter-Base Voltage5VICCollector Current-Continuous5AICMCollector Current-Peak8AIBBase Current120mAPCCollector Power DissipationTC=25℃65WCollector Power DissipationTa=25℃2TjJunction Temperature150℃TstgStorageTemperature Range-65~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A, IB= 0100
VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 3A ,IB= 12mA
2.0VVCE(sat)-2Collector-Emitter Saturation voltageIC= 5A ,IB= 20mA
4.0VVBE(on)Base-Emitter On VoltageIC=
3.0A ; VCE= 3V
2.5VICBOCollector Cutoff CurrentVCB= 100V, IE= 0
0.2mAICEOCollector Cutoff CurrentVCE= 50V, IB= 0
0.5mAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0
2mAhFE-1DC Current GainIC= 0.5A ; VCE= 3V1000
hFE-2DC Current GainIC=
3.0A ; VCE= 3V1000
COBOutput CapacitanceIE= 0 ; VCB= 10V,f= 0.1MHz
200pF
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号