三*管13002(图)

发布询价信息

普通会员

产品分类

新品上架

商品信息 更新时间：2012-12-12

充电器*(耐压达450V以上)产品，13002. 13003. 13005. 13007

MJE13002 TRANSISTOR(NPN)

1:FEATUR*

Power switching applications

2:MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

symbol	parameter	value	units
Vcbo	Collector-Base Voltage	600	V
Vceo	Collector-Emitter Voltage	400	V
Vebo	Emitter-Base Voltage	9	V
Ic	Collector Current-Continuous	0.8	A
Pc	Collector Power Dissipation	0.9	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

3:ELE*RICAL CHARA*ERISTICS (Tamb=25℃unless otherwise specified)

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)cbo	IC=100uA IE=0	600			V
Collector-emitter breakdown voltage	V(BR)ceo	IC=1mA IB=0	400			V
Emitter-base breakdown voltage	V(BR)ebo	IE=100uA IC=0	9			V
Collector cut-off Current	Icbo	Vcb=600V IE=0			100	uA
Collector cut-off Current	Iceo	Vce=400V IB=0			100	uA
Emitter cut-off Current	Iebo	Veb=6V IC=0			100	uA
DC Current gain	hEF(1)	Vce=20VIC=20 mA	10		40
DC Current gain	hEF(2)	Vce=10VIC=0.25mA	5
Collector-emitter saturation voltage	VCE(sat)	IC=200mA IB=40 mA			0.5	V
Base -emitter saturation voltage	VBE(sat)	IC=200mA IB=40 mA			1.2	V
Transition frequency	fT	Vce=10VIC=100 mA f=1MHZ	5			MHZ
Fall time	tf	VCC=100V IC=1A IB1=-IB2=0.2A			0.5	US
Storage time	ts	VCC=100V IC=1A IB1=-IB2=0.2A			2.5	US