*号

Symbol

名    称

Characteristics

额定值

Rating

单位

cbo

集电*—基*电压

Colletor-Base Voltage

-40

V

Vceo

集电*—发射*电压

Colleltor-Emitter Voltage

-30

V

Vebo

发射*—基*电压

Emitter-Base Voltage

-6

V

Ic

集电*电流

Colletor Current

-3000

mA

Pc

集电*功率耗散

Colletor Dissipation

1250

mW

Tj

结   温

Junction Temperature

150

℃

Tstg

贮存温度

Storage Temperature

-55-150

℃

*号

Symbol

名    称

Characteristsics

测试条件

Test Conditions

*小值

Min

特征值

T*

*大值

Max

单位

Unit

Bvcbo

集电*—基*击穿电压

Collector-Base BreakdownVoltage

Ic=-100μA, Ie=0

-40

V

BVceo

集电*—发射*击穿电压

Collector-Emitter Breakdown Voltage

Ic=-5mA, Ib=0

-30

V

Bvebo

发射*—基*击穿电压

Emitter-Base Breakdown Voltage

Ie=-100μA, Ic=0

-6

V

Icbo

集电*—基*截止电流

Collector-Base Cutoff Current

Vcb=-40v, Ie=0

-0.1

μA

Iebo

发射*截止电流

Emitter Cutoff Current

Veb=-5v, Ic=0

-0.1

μA

HFE

直流电流增益

DC Current Gain

Vce=-2v, Ic=-1A

60

400

Vces

集电*—发射*饱和压降

Collector-Emitter Sateration Voltage

Ic=-2000mA, Ib=-200mA

-0.3

-0.5

V

Vbes

基*—发射*饱和压降

Base -Emitter Sateration Voltage

Ic=-2A, Ib=-0.2A

-2.0

V

Ft

特征频率

Gurrent Gain-Bandwidth Product

Vce=-5v,Ic=-5mA

50

300

MHz