维库电子市场网-十六年专注打造电子元器件采购网

一键发布采购上传BOM

您现在的位置：维库电子市场网 > 元器件 > 其他未分类

富士通铁电存储器 *85RC128PNF-G-JNERE1

型号/规格：
*85RC128PNF-G-JNERE1
品牌/商标：
FUJITSU

发布询价信息

普通会员

企业名：贝利科技（香港）有限公司

类型：经销商

电话： 0755-82862090

手机：13826592928

联系人：陆先生QQ:1908921002,264441137,覃小姐Q:261874492

QQ：

邮箱：believe_tec@163.com

地址：广东深圳深圳市深南中路佳和华强大厦A座8楼A-815室

产品分类

其他未分类(20)

新品上架

商品信息 更新时间：2011-12-02

*原厂原装无铅现货，10+，1500/盘

The *85RC128PNF-G-JNERE1 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words * 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The *85RC128PNF-G-JNERE1 adopts the two-wire serial interface. Unlike SRAM, the device is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the *85RC128PNF-G-JNERE1 has improved to be at least 1010 cycles, significantly out performing Flash memory and E2PROM in the number. The device does not need a polling sequence after writing to the memory such as the case of Flash memory nor E2PROM.

Parametrics

*85RC128PNF-G-JNERE1 absolute maximum ratings: (1)Power supply voltage:-0.5V to +4.0 V; (2)Input pin voltage:-0.5V to VCC + 0.5 ( ≤ 4.0) V; (3)Output pin voltage:-0.5V to VCC + 0.5 ( ≤ 4.0) V; (4)Ambient temperature:-40℃ to + 85℃; (5)Storage temperature:-40℃ to + 125℃.

Features

*85RC128PNF-G-JNERE1 features: (1)Bit configuration :16,384 words * 8 bits ; (2)Operating power supply voltage : 2.7 V to 3.6 V; (3)Operating frequency : 400 kHz (Max) ; (4)Two-wire serial interface : I2C-bus specification ver. 2.1 compliant, supports Standard-mode/Fast-mode.Fully controllable by two ports: serial clock (SCL) and serial data(SDA); (5)Operating temperature range:-40℃ to +85℃; (6)Data retention : 10 years ( + 75℃) ; (7)Read/write endurance : 1010 times; (8)Package : Plastic / SOP, 8-pin (FPT-8P-M02); (9)Low power consumption : Operating current 0.15 mA (Max: @400 kHz), Standby current 5 μA (T*).