*4C0*-GTR
RAMTRON
企业名:贝利科技(香港)有限公司
类型:经销商
电话: 0755-82862090
手机:13826592928
联系人:陆先生QQ:1908921002,264441137,覃小姐Q:261874492
邮箱:believe_tec@163.com
地址:广东深圳深圳市深南中路佳和华强大厦A座8楼A-815室
The *4C0*-GTR is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The *4C0*-GTR provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The *4C0*-GTR performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device.
*4C0*-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to + 125℃; (4)Lead temperature (Soldering, 10 seconds):260℃; (5)Electrostatic Discharge Voltage:Human Body Model (AEC-Q100-002 Rev. E):3kV, Charged Device Model (AEC-Q100-011 Rev. B):1.25kV, Machine Model (AEC-Q100-003 Rev. E):250V ; (6)Package Moisture Sensitivity Level:MSL-1.
*4C0*-GTR features: (1)Organized as 512 x 8 bits ; (2)High Endurance 1012 Read/Writes ; (3)38 Year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 1 MHz maximum bus frequency ; (7)Direct hardware replacement for EEPROM ; (8)Supports legacy timing for 100 kHz & 400 kHz ; (9)Low Power Operation ; (10)5V operation ; (11)100 μA Active Current (100 kHz) ; (12)4 μA (t*.) Standby Current ; (13)Industrial Temperature -40℃ to +85℃; (14)8-pin “Green”/RoHS SOIC (-G).
企业名:贝利科技(香港)有限公司
类型:经销商
电话: 0755-82862090
手机:13826592928
联系人:陆先生QQ:1908921002,264441137,覃小姐Q:261874492
邮箱:believe_tec@163.com
地址:广东深圳深圳市深南中路佳和华强大厦A座8楼A-815室
友情链接: 深圳市元东发电子有限公司