RAMTRON铁电存储器 *5V05-GTR

型号/规格：
*5V05-GTR
品牌/商标：
RAMTRON

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商品信息

*原厂原装无铅现货，10+，2500/盘

The *5V05-GTR is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The *5V05-GTR provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the *5V05-GTR performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device.

Parametrics

*5V05-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +4.5V ; (2)Voltage on any pin with respect to VSS:-1.0V to +4.5V and VIN < VDD+1.0V ; (3)Storage Temperature:-55℃ to +125℃ ; (4)Lead Temperature (Soldering, 10 seconds):260℃ ; (5)Electrostatic Discharge Voltage:Human Body Model (AEC-Q100-002 Rev. E):4kV, Charged Device Model (AEC-Q100-011 Rev. B):1.25kV, Machine Model (AEC-Q100-003 Rev. E):200V; (6)Package Moisture Sensitivity Level:MSL-1 .

Features

*5V05-GTR features: (1)Organized as 65,536 x 8 bits ; (2)High Endurance 100 Trillion (1014) Read/Writes ; (3)10 Year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 40 MHz Frequency ; (7)Direct Hardware Replacement for Serial Flash ; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) ; (9)Hardware Protection ; (10)Software Protection ; (11)Device ID reads out Manufacturer ID & Part ID ; (12)Low Voltage, Low Power ; (13)Low Voltage Operation 2.0V to 3.6V ; (14)90 μA Standby Current (t*.) ; (15)5 μA Sleep Mode Current (t*.) ; (16)Industrial Temperature -40℃ to +85℃; (17)8-pin “Green”/RoHS SOIC Package.