功能应用: 75 V, 150 mA, Silicon epitaxial planar diode

RLS4148 / RLS4150 / RLS4448
Diodes
Switching diode
RLS4148 / RLS4150 / RLS4448
∗This product is available only outside of Japan.
!Applications
High-speed switching
!Features
1) Small surface mounting t*e. (LLDS)
2) High speed.
3) For surface mounting.
4) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
−0.1
+0.2
φ1.5Max.
φ
1.4
&plu*n;
0.1
0.40.4
3.4
CATHODE BAND
EIAJ : −
JEDEC : LL-34
ROHM : LLDS
!Absolute maximum ratings (Ta = 25°C)
RLS4148
RLS4150
RLS4448
VRM
(V)
100
50
100
VR
(V)
75
50
75
IFM
(mA)
450
600
450
IO
(mA)
150
200
150
IF
(mA)
200
250
200
IFSM
1µs
(A)
2
4
2
P
(mW)
500
500
500
Tj
(°C)
200
200
200
Topr
(°C)
Tstg
(°C)
T*e
−65~+200
−65~+200
−65~+200
−65~+200
−65~+200
−65~+200
!Electrical characteristics (Ta = 25°C)
0.025
5.0
20
75
VF (V)
RLS4148
RLS4150
RLS4448
@
1mA
@
5mA
@
10mA
@
50mA
@
100mA
@
200mA
BV (V)Min.
@
5µA
75
−
−
@
100µA
100
50
100
IR (µA)Max.
@25°C
0.1
0.025
5.0
50
20
75
@150°C
50.0
100.0
50.0
20
50
20
Cr (pF)
4
2.5
4
trr (ns)
VR=6V
IF=10mA
RL=100?
4
4
4
T*e
VR (V) VR (V)
VR=0
f=1MHz
1.0
0.54
0.62
0.66
0.74
0.76
0.86
0.82
0.92
0.87
1.0
0.62
0.72 1.0
The upper figure is the minimum VF and the lower figure is the maximum VF value.
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