*开关二*管

Switching diode
1SS355
zApplications zDimensions (Unit : mm) zLand size figure (Unit : mm)
High speed switching
zFeatures
1) Ultra *all mold t*e.(UMD2)
2) High reliability.
zConstruction
Silicon epitaxial planar
zStructure
zTaping specification (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
zElectrical characteristics (Ta=25°C)
UMD2
2.1
0.8MIN.
0.9MIN.
Symbol Unit
VRM V
VR V
IFM mA
Io mA
Isurge mA
Tj ℃
Tstg ℃
Surge current （t=1s） 500
Junction temperature
Storage temperature
150
-55 to +150
Limits
80
100
90
225
Parameter
Reverse voltage (DC)
Average rectified forward current
Reverse voltage (repetitive peak)
Forward current
Symbol Min. T*. Max. Unit Conditions
VF - - 1.2 V IF=100mA
IR - - 0.1 μA VR=80V
Ct - - 3 pF VR=0.5V , f=1MHz
trr - - 4 ns VR=6V , IF=10mA , RL=100Ω
Reverse current
Parameter
Forward voltage
Reverse recovery time
Capacitance between terminals
ROHM : UMD2
JEITA : SC-90/A
JEDEC : S0D-323
dot (year week factory)
0.3&plu*n;0.05
0.7&plu*n;0.2
　　　 0.1
0.1&plu*n;0.1
　　　 0.05
1.7&plu*n;0.1
2.5&plu*n;0.2
1.25&plu*n;0.1
4.0&plu*n;0.1 2.0&plu*n;0.05
φ1.55&plu*n;0.05
1.40&plu*n;0.1 4.0&plu*n;0.1 φ1.05
2.75
3.5&plu*n;0.05 1.75&plu*n;0.1
8.0&plu*n;0.2
0.3

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