国产
S9014
放大
小功率
低频
NPN型
点接触型
硅(Si)
直插型
塑料封装
*
*
企业名：深圳市晶泰达电子有限公司
类型：生产加工
电话： 0755-29769280
联系人：杨斌
地址：广东深圳82区华美居B区416
*，长期大量供应三*管S9014，To-92，欢迎来电咨询。
ELE*RICAL CHARA*ERISTICS(Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | lc=100μA, lE=0 | 50 |
|
| V |
Collector-emitter breakdown voltage | V(BR)CEO | lc=1mA, lB=0 | 45 |
|
| V |
Emitter-base breakdown voltage | V(BR)EBO | lE=100μA,lc=0 | 5 |
|
| V |
Collector cut-off current | lCBO | VCB=50V, lB=0 |
|
| 0.1 | μA |
Collector cut-off current | lCEO | VCE=35V, lB=0 |
|
| 1 | μA |
Emitter cut-off current | lEBO | VEB=5V, lc=0 |
|
| 0.1 | μA |
DC current gain | hFE | VCE=5V,lc=1mA | 60 |
| 1000 |
|
Collector-emitter saturation voltage | VCE(sat) | lc=-100mA,lB=5mA |
|
| 0.3 | V |
Base-emitter saturation voltage | VBE(sat) | lc=100mA,lB=5mA |
|
| 1 | V |
Transition frequency | fT | VCE=5V,lc=10mA f=30MHZ | 150 |
|
| MHZ |
CLASSIFICATION OF hFE(1)
Rank | A | B | C | D |
Range | 60-150 | 100-300 | 200-600 | 400-1000 |
友情链接： 深圳市元东发电子有限公司
