STP75NF75

N-channel 75V - 0.0095Ω - 80A - TO-220 -

STripFET™ II Power MOSFET

Symbol Parameter
Value
Unit
D2PAK /TO-220 TO-220FP
VDS Drain-source voltage (VGS = 0) 75 V
VDGR Drain-gate voltage (RGS = 20KΩ) 75 V
VGS Gate-source voltage ± 20 V
ID
(1)
1. Current limited by package
Drain current (continuous) at TC = 25°C 80 80 A
ID
(1) Drain current (continuous) at TC=100°C 70 70 A
IDM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 320 A
PTOT Total dissipation at TC = 25°C 300 45 W
Derating factor 2.0 0.3 W/°C
dv/dt (3)
3. ISD ≤ 80A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Peak diode recovery voltage slope 12 V/ns
EAS
(4)
4. Starting TJ = 25 oC, ID = 40A, VDD = 37.5V
Single pulse avalanche energy 700 mJ
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t=1s;TC=25°C)
-- 2000 V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175 °C

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